Title :
ESD failure caused by parasitic SCR in an overvoltage tolerant I/O
Author :
D. Alvarez;M. Wendel;A. Stuffer
Author_Institution :
Infineon Technologies, 85579-Neubiberg, Germany
Abstract :
A new type of ESD failure in an overvoltage tolerant I/O of a CMOS embedded flash technology is presented. The failure is caused by the triggering of a parasitic SCR formed by high voltage devices between I/O and supply. Several solutions to prevent the failure are shown.
Keywords :
"Electrostatic discharges","Thyristors","Stress","Voltage measurement","Current measurement","Resistors","CMOS integrated circuits"
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
DOI :
10.1109/EOSESD.2015.7314773
