• DocumentCode
    3683142
  • Title

    Engineering of dual-direction SCR cells for component and system level ESD, surge, and longer EOS events

  • Author

    Augusto Tazzoli;Vladislav Vashchenko

  • Author_Institution
    Maxim Integrated Corp., 160 Rio Robles, San Jose, CA, 95134, USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Bidirectional SCRs were developed and experimentally validated as a viable solution to protect against component and system level ESD events, surge transients, and even longer EOS stresses. Engineering of both device front- and back-end allowed obtaining low leakage and capacitance, and a linear scalability of passing level upon device width.
  • Keywords
    "Surges","Thyristors","Stress","Layout","Electrostatic discharges","Surge protection","Hidden Markov models"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
  • Type

    conf

  • DOI
    10.1109/EOSESD.2015.7314780
  • Filename
    7314780