DocumentCode
3683142
Title
Engineering of dual-direction SCR cells for component and system level ESD, surge, and longer EOS events
Author
Augusto Tazzoli;Vladislav Vashchenko
Author_Institution
Maxim Integrated Corp., 160 Rio Robles, San Jose, CA, 95134, USA
fYear
2015
Firstpage
1
Lastpage
7
Abstract
Bidirectional SCRs were developed and experimentally validated as a viable solution to protect against component and system level ESD events, surge transients, and even longer EOS stresses. Engineering of both device front- and back-end allowed obtaining low leakage and capacitance, and a linear scalability of passing level upon device width.
Keywords
"Surges","Thyristors","Stress","Layout","Electrostatic discharges","Surge protection","Hidden Markov models"
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
Type
conf
DOI
10.1109/EOSESD.2015.7314780
Filename
7314780
Link To Document