Title :
Wear out effects in ESD characterization and testing
Author :
Theo Smedes;Dolphin Abessolo-Bidzo
Author_Institution :
NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, the Netherlands
Abstract :
Wear out effects resulting from multiple stresses may have significant impact on ESD characterization and testing. This is shown in examples of (vf-)TLP, HMM and CDM results on test structures and products. Wear out effects lead to lower failure levels and should be minimized to obtain the correct pass/fail levels.
Keywords :
"Stress","Electrostatic discharges","Silicides","Degradation","Hidden Markov models","Qualifications","Metals"
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
DOI :
10.1109/EOSESD.2015.7314783
