DocumentCode :
3683160
Title :
Active clamps with hybrid BJT-CMOS operation mode
Author :
Vladislav Vashchenko;Blerina Aliaj;Augusto Tazzoli;Andrei Shibkov
Author_Institution :
Maxim Integrated Corp, San Jose, USA
fYear :
2015
Firstpage :
1
Lastpage :
7
Abstract :
A method to exploit the internal gain of the parasitic bipolar transistor in integrated LDMOS devices achieving a mixed bipolar-CMOS regime is proposed and validated using numerical simulation and experimental results. An improvement of active protection clamps in ESD component, HMM, and surge operation regime is demonstrated. The same principle for NLDMOS device in mixed bipolar-CMOS in linear regime is further demonstrated and applied for power stages.
Keywords :
"Clamps","Arrays","Electrostatic discharges","Logic gates","Surge protection","Hidden Markov models","Surges"
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
Type :
conf
DOI :
10.1109/EOSESD.2015.7314798
Filename :
7314798
Link To Document :
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