• DocumentCode
    3683161
  • Title

    Using CC-TLP to get a CDM robustness value

  • Author

    Kai Esmark;Reinhold Gaertner;Stefan Seidl;Friedrich zur Nieden;Heinrich Wolf;Horst Gieser

  • Author_Institution
    Infineon Technologies, Am Campeon 1-12, 85579 Neubiberg Germany
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    Charged Device Model (CDM) like stress represents the highest ESD risk during handling of single devices. Today air discharge compromises repeatability of CDM tests of products in a package. The paper demonstrates that the repeatable Capacitive Coupled TLP (CC-TLP) reproduces CDM failure signatures at both package and wafer level. Data will be shown to compare the stress failing level and the failure locations on the chip.
  • Keywords
    "Stress","Correlation","Discharges (electric)","Capacitance","Integrated circuits","Robustness","Electrostatic discharges"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
  • Type

    conf

  • DOI
    10.1109/EOSESD.2015.7314799
  • Filename
    7314799