DocumentCode
3683161
Title
Using CC-TLP to get a CDM robustness value
Author
Kai Esmark;Reinhold Gaertner;Stefan Seidl;Friedrich zur Nieden;Heinrich Wolf;Horst Gieser
Author_Institution
Infineon Technologies, Am Campeon 1-12, 85579 Neubiberg Germany
fYear
2015
Firstpage
1
Lastpage
10
Abstract
Charged Device Model (CDM) like stress represents the highest ESD risk during handling of single devices. Today air discharge compromises repeatability of CDM tests of products in a package. The paper demonstrates that the repeatable Capacitive Coupled TLP (CC-TLP) reproduces CDM failure signatures at both package and wafer level. Data will be shown to compare the stress failing level and the failure locations on the chip.
Keywords
"Stress","Correlation","Discharges (electric)","Capacitance","Integrated circuits","Robustness","Electrostatic discharges"
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
Type
conf
DOI
10.1109/EOSESD.2015.7314799
Filename
7314799
Link To Document