Title :
Using CC-TLP to get a CDM robustness value
Author :
Kai Esmark;Reinhold Gaertner;Stefan Seidl;Friedrich zur Nieden;Heinrich Wolf;Horst Gieser
Author_Institution :
Infineon Technologies, Am Campeon 1-12, 85579 Neubiberg Germany
Abstract :
Charged Device Model (CDM) like stress represents the highest ESD risk during handling of single devices. Today air discharge compromises repeatability of CDM tests of products in a package. The paper demonstrates that the repeatable Capacitive Coupled TLP (CC-TLP) reproduces CDM failure signatures at both package and wafer level. Data will be shown to compare the stress failing level and the failure locations on the chip.
Keywords :
"Stress","Correlation","Discharges (electric)","Capacitance","Integrated circuits","Robustness","Electrostatic discharges"
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
DOI :
10.1109/EOSESD.2015.7314799