• DocumentCode
    3683167
  • Title

    Self-ESD-protected transmission line broadband in CMOS28nm UTBB-FDSOI

  • Author

    Johan Bourgeat;Tekfouy Lim;Boris Heitz;Jean Jimenez;Philippe Galy

  • Author_Institution
    STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Advanced CMOS Technologies, and particularly Ultra-Thin Body and BOX Fully Depleted Silicon on Insulator (UTBB-FDSOI) technology provide good performances for analog high frequency and ultra-low power applications. We present in this paper self-ESD-protected transmission lines based on two different ESD strategies. Specific ESD protections based on bidirectional SCR (bi-SCR) are directly embedded on the transmission lines.
  • Keywords
    "Electrostatic discharges","Capacitance","BiCMOS integrated circuits","Trigger circuits","Radio frequency","Transmission line measurements","Junctions"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
  • Type

    conf

  • DOI
    10.1109/EOSESD.2015.7314805
  • Filename
    7314805
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3683167