Title :
Innovative high-density ESD protection device in state of the art UTBB FDSOI technologies
Author :
Pascal Fonteneau;Yohann Solaro;David Marin-Cudraz;Charles-Alexandre Legrand;Claire Fenouillet-Beranger
Author_Institution :
STMicroelectronics, 850 rue Jean Monnet, F-38926 Crolles Cedex, France
Abstract :
For the first time, we demonstrate an innovative way to build ESD protection in FDSOI technologies. This protection is comprised of two stacked devices one on the other: a bottom bulk-thyristor and a top thin film triggering device. Low leakage current, tunable triggering voltage and high current capability are highlighted.
Keywords :
"Electrostatic discharges","Thyristors","Logic gates","Junctions","Leakage currents","Anodes","Current measurement"
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
DOI :
10.1109/EOSESD.2015.7314808
