• DocumentCode
    3686065
  • Title

    Investigation of deep level centers in i- and n-layers of GaAs pin - diodes

  • Author

    J. Toompuu;O. Korolkov;N. Sleptsuk;T. Rang

  • Author_Institution
    Thomas Johann Seebeck Department of Electronics, Tallinn University of Technology, Ehitajate tee 5, 19086, Estonia
  • fYear
    2014
  • Firstpage
    25
  • Lastpage
    28
  • Abstract
    This work presents the results of capacitance-voltage (C-V), current-voltage (I-V) and deep level transient spectroscopy (DLTS) on special Schottky diode samples fabricated on the basis of GaAs p+-pin-n+ structure. It is shown that in the i-layer and n-region bordering the i-layer is observed “anomalous” stationary capacitance temperature change. DLTS spectra analysis allowed to identify the electron trap EL2 and to determine its concentration distribution. Suggested a possible interaction of hole traps A and B with the electron traps EL2.
  • Keywords
    "Gallium arsenide","Temperature","Capacitance","Impurities","Capacitance-voltage characteristics","Schottky diodes","Electron traps"
  • Publisher
    ieee
  • Conference_Titel
    Electronic Conference (BEC), 2014 14th Biennial Baltic
  • Type

    conf

  • DOI
    10.1109/BEC.2014.7320547
  • Filename
    7320547
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3686065