DocumentCode
36864
Title
Modeling the Dark Current Non-Uniformity of Image Sensors With GEANT4
Author
Inguimbert, C. ; Nuns, T. ; Ursule, M.C. ; Falguere, D. ; Herve, D. ; Beaumel, M. ; Poizat, Marc
Author_Institution
DESP, ONERA, Toulouse, France
Volume
61
Issue
6
fYear
2014
fDate
Dec. 2014
Firstpage
3323
Lastpage
3330
Abstract
The 3D Monte Carlo transport code GEANT 4 was used to simulate the Dark Current Non Uniformity of image sensors. The method includes three different physical processes: the Coulombic scattering, the nuclear elastic interaction and the nuclear inelastic interaction. The dark current distribution is directly deduced from the damage distribution according to the Universal Damage Factor of Srour (UDF). Comparisons have been performed with experimental measurements made on two CMOS Image Sensors (JADE from E2 V and HAS2 from ON SEMICONDUCTOR) irradiated with protons of various energies ranging from 30 MeV to 185 MeV. Despite the simplifying assumptions of the model, the calculations are demonstrated to be in quite good agreement with experimental data.
Keywords
CMOS image sensors; Monte Carlo methods; dark conductivity; proton effects; 3D Monte Carlo transport code; CMOS image sensors; Coulombic scattering; GEANT4 code; Srour universal damage factor; damage distribution; dark current distribution; dark current nonuniformity; electron volt energy 30 MeV to 185 MeV; nuclear elastic interaction; nuclear inelastic interaction; physical processes; proton irradiation; Active pixel sensors; CMOS image sensors; Charge coupled devices; Dark current; Degradation; Image sensors; Monte Carlo methods; Protons; Radiation effects; CCD APS; CIS; DCNU; displacement damages; image sensors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2014.2364332
Filename
6953268
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