• DocumentCode
    3686973
  • Title

    Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs

  • Author

    M. Mandurrino;G. Verzellesi;M. Goano;S. Dominici;F. Bertazzi;G. Ghione;M. Meneghini;G. Meneghesso;E. Zanoni

  • Author_Institution
    Dipt. di Elettron. e Telecomun., Politec. di Torino, Turin, Italy
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A semi-classical model describing electron and hole trap-assisted tunneling (TAT), which accounts for multiphonon and elastic transitions, is presented and tested on different single-quantum-well light-emitting diode (LED) structures. Our numerical and experimental study confirms that TAT constitutes one of the main contributions to the forward current below the LED optical turn-on.
  • Publisher
    iet
  • Conference_Titel
    Fotonica AEIT Italian Conference on Photonics Technologies, 2015
  • Print_ISBN
    978-1-78561-068-4
  • Type

    conf

  • DOI
    10.1049/cp.2015.0136
  • Filename
    7322045
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3686973