Title :
Modeling and analysis of Double Gate Ferroelectric Junctionless (DGFJL) transistor
Author :
Hema Mehta;Harsupreet Kaur
Author_Institution :
Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi-110021, India
Abstract :
In this paper we have developed an analytical model for Double Gate Ferroelectric Junctionless (DGFJL) transistor using Landau´s theory and parabolic potential approximation. We have obtained expressions for surface potential and electric field and have demonstrated negative capacitance effect provided by ferroelectric layer. The results also demonstrate the step-up conversion capability of this device, thereby signifying improved gate control and the suitability of this device for low voltage/low power switching applications.
Keywords :
"Analytical models","Logic gates","Mobile communication","Doping","Metals"
Conference_Titel :
Radio and Antenna Days of the Indian Ocean (RADIO), 2015
DOI :
10.1109/RADIO.2015.7323395
