Statistical investigation on the passive RF components thermal effects EMC applications

This paper describes a technique for characterizing the thermal effect induced in the passive devices at RF frequencies. The proposed method is based on the identification of the measured input impedance with the equivalent circuit of the R, L, C components. To illustrate the efficiency of this technique, a lumped capacitor is modeled from 30 kHz to 1 GHz for a temperature range from 25°C to 130°C and under stochastic assumptions (uncertainties with respect to the temperature effect). A good agreement between model and measurements is observed.