• DocumentCode
    3688105
  • Title

    Free carrier effects as a complicating variable in the analysis of strained silicon

  • Author

    Rajat Sharma;Matthew W. Puckett;Hung-Hsi Lin;Felipe Vallini;Yeshaiahu Fainman

  • Author_Institution
    Dept. of Electr. &
  • fYear
    2015
  • Firstpage
    164
  • Lastpage
    165
  • Abstract
    We characterize free carrier effects in silicon waveguides due to electronic non-idealities such as dielectric fixed charges and interface states, independently considering SiO2, SiNx and Al2O3 cladding layers. These effects are shown to impact both the passive and active properties of silicon waveguides.
  • Keywords
    "Silicon","Indexes","Electric fields","Analytical models","Dielectrics"
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2015
  • ISSN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/IPCon.2015.7323542
  • Filename
    7323542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3688105