• DocumentCode
    3688121
  • Title

    A high-speed, high-sensitivity silicon avalanche photodiode in 130-nm CMOS

  • Author

    Jing Gao;Hui Wu

  • Author_Institution
    Department of Electrical and Computer Engineering, University of Rochester, NY 14627 USA
  • fYear
    2015
  • Firstpage
    438
  • Lastpage
    439
  • Abstract
    We report a Si avalanche photodiode (APD) based on a p+/NW/p-sub structure, fabricated using a 130-nm CMOS technology. The devices achieved maximum bandwidth of 2.4 GHz and highest avalanche gain of more than 104.
  • Keywords
    "Substrates","Anodes","Cathodes","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2015
  • ISSN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/IPCon.2015.7323561
  • Filename
    7323561
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3688121