Title :
Dilute-As AlNAs semiconductor for ultraviolet emitters
Author :
Chee-Keong Tan;Nelson Tansu
Author_Institution :
Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
Abstract :
First-principle analysis of the band structures for dilute-As AlN1-xAsx semiconductor was performed, and the findings showed the direct bandgap properties of this alloy covering the deep ultraviolet spectral regime useful for new ultraviolet emitter.
Conference_Titel :
Photonics Conference (IPC), 2015
DOI :
10.1109/IPCon.2015.7323584
