Title :
Lateral silicon photodiodes with extremely low dark current for visible and infra-red applications
Author :
J. Mehta;L. Lunardi
Author_Institution :
North Carolina State University, Raleigh 27695, USA
Abstract :
We present two lateral p-i-n photodiodes for operation in the 400-900nm wavelength range. The design is compatible with typical 180nm CMOS process and yields high responsivity and low dark current independent of the geometry.
Keywords :
"Silicon","Substrates","Junctions","Photodiodes"
Conference_Titel :
Photonics Conference (IPC), 2015
DOI :
10.1109/IPCon.2015.7323594
