Title :
InAsP quantum dot lasers
Author :
I. Karomi;S. Shutts;P.M. Smowton;A.B. Krysa;R. Beanland
Author_Institution :
School of Physics and Astronomy, Cardiff University, The Parade, CF24 3AA, UK
Abstract :
InAsP quantum dot (QD) lasers emitting between 660-775nm with 300K threshold current density of 260 Acm-2 for 2mm long uncoated facet devices and operation up to 380K are compared to InP QD lasers emitting at shorter wavelength.
Keywords :
"Photonics","Indium phosphide","III-V semiconductor materials"
Conference_Titel :
Photonics Conference (IPC), 2015
DOI :
10.1109/IPCon.2015.7323595
