DocumentCode :
3688171
Title :
Continuous-wave emission of III–V quantum dot lasers grown directly on Si substrates
Author :
Samuel Shutts;Stella N. Elliott;Peter M. Smowton;Angela Sobieserski;Jiang Wu;Mingchu Tang;Huiyun Liu;Richard Beanland
Author_Institution :
Physics and Astronomy, Queens Building, The Parade, Cardiff, CF24 3AA, United Kingdom
fYear :
2015
Firstpage :
595
Lastpage :
596
Abstract :
We report on 1.3-μm emitting InAs/GaAs quantum-dot ridge lasers grown directly on a silicon substrate. Using an optimised dislocation filter design, continuous-wave operation is achieved with power outputs exceeding 20-mW and operation up to 39°C.
Keywords :
"Gallium arsenide","Indium gallium arsenide","Silicon","Heat sinks","Threshold current"
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2015
ISSN :
1092-8081
Type :
conf
DOI :
10.1109/IPCon.2015.7323616
Filename :
7323616
Link To Document :
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