DocumentCode
3688184
Title
Low-loss and high-speed electroabsorption modulator using InGaAsP/InAlGaAs multiple quantum wells
Author
Sheng-An Yang;Po-Yun Wang;Cong-Long Chen;Yi-Jen Chiu
Author_Institution
Department of Photonics, National Sun Yat-Sen University, Kaoshiung 80424, Taiwan R.O.C
fYear
2015
Firstpage
94
Lastpage
95
Abstract
A new quantum well, namely InGaAsP/InAlGaAs, is used for electroabsorption modulator. High band-offset ratio between well and barrier induces strong exciton effect, leading to low fiber-to-fiber loss of -8dB, >25dB extinction ratio, and >30GHz bandwidth.
Keywords
"Optical fibers","Integrated optics","Optical modulation","Optical polarization","Quantum well devices","Frequency modulation"
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2015
ISSN
1092-8081
Type
conf
DOI
10.1109/IPCon.2015.7323631
Filename
7323631
Link To Document