Title :
First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode
Author :
M. A. Majid;A. A. Al-Jabr;H. M. Oubei;M. S. Alias;T. K. Ng;D. H. Anjum;B. S. Ooi
Author_Institution :
Photonics Laboratory, King Abdullah University of Science &
Abstract :
We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ~4.5mW which is the highest ever reported power on this material system at room-temperature.
Keywords :
"Lasers","Annealing","Photonic band gap","Current density","Power generation","Optical device fabrication","Power amplifiers"
Conference_Titel :
Photonics Conference (IPC), 2015
DOI :
10.1109/IPCon.2015.7323633
