DocumentCode
3688190
Title
Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate
Author
Chao Shen;John Leonard;Arash Pourhashemi;Hassan Oubei;Mohd Sharizal Alias;Tien Khee Ng;Shuji Nakamura;Steven P. DenBaars;James S. Speck;Ahmed Y. Alyamani;Munir M. Eldesouki;Boon S. Ooi
Author_Institution
Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal 21534, Saudi Arabia
fYear
2015
Firstpage
581
Lastpage
582
Abstract
We have demonstrated the monolithic integration of an electroabsorption modulator with a laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at -3.5 V and 0 V, we achieve the laser output power of <; 1.5 mW to > 9 mW, respectively, leading to ~8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.
Keywords
"Optical polarization","Optical modulation","Passive optical networks","Absorption","Gallium nitride","Substrates"
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2015
ISSN
1092-8081
Type
conf
DOI
10.1109/IPCon.2015.7323637
Filename
7323637
Link To Document