Title :
High performance Ge/Si avalanche photodiode
Author :
Mengyuan Huang;Pengfei Cai;Liangbo Wang;Su Li;Wang Chen;Ching-yin Hong;Nai Zhang;Dong Pan
Author_Institution :
SiFotonics-Technologies Co. Ltd., 500 West Cummings Park, Suite 3250, Woburn, MA 01801, USA
Abstract :
We review our recent development of germanium on silicon avalanche photodiodes (Ge/Si APDs). Our Ge/Si APDs, manufactured by a standard CMOS commercial foundry, satisfy the requirements of various optical communication systems from 10Gb/s to 25Gb/s.
Keywords :
"Sensitivity","Silicon","Absorption","Data systems","Standards","Radio frequency","Power measurement"
Conference_Titel :
Photonics Conference (IPC), 2015
DOI :
10.1109/IPCon.2015.7323649
