• DocumentCode
    3688227
  • Title

    Artificially-engineered InGaN-based digital alloy for optoelectronics

  • Author

    Wei Sun;Chee-Keong Tan;Nelson Tansu

  • Author_Institution
    Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
  • fYear
    2015
  • Firstpage
    519
  • Lastpage
    520
  • Abstract
    An artificially-engineered InGaN-based digital alloy is investigated based on GaN/InN superlattice, and the findings indicate the capability of this material system to achieve tunable bandgap and absorption properties for optoelectronic applications.
  • Keywords
    "Gallium nitride","Digital alloys"
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2015
  • ISSN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/IPCon.2015.7323675
  • Filename
    7323675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3688227