Title :
Artificially-engineered InGaN-based digital alloy for optoelectronics
Author :
Wei Sun;Chee-Keong Tan;Nelson Tansu
Author_Institution :
Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
Abstract :
An artificially-engineered InGaN-based digital alloy is investigated based on GaN/InN superlattice, and the findings indicate the capability of this material system to achieve tunable bandgap and absorption properties for optoelectronic applications.
Keywords :
"Gallium nitride","Digital alloys"
Conference_Titel :
Photonics Conference (IPC), 2015
DOI :
10.1109/IPCon.2015.7323675
