DocumentCode :
3688238
Title :
Linear mode CMOS compatible p-n junction avalanche photodiode with operating voltage below 9V
Author :
Md. Mottaleb Hossain;Payman Zarkesh-Ha;Majeed M. Hayat
Author_Institution :
Center for High Technology Materials and Department of Electrical &
fYear :
2015
Firstpage :
436
Lastpage :
437
Abstract :
This paper reports linear-mode p-n junction silicon avalanche photodiodes (APD) fabricated in 1 μm standard CMOS process. Measured mean gain of ~50 was obtained at a sufficiently low operating voltage of 8.7 V.
Keywords :
"Wavelength measurement","CMOS integrated circuits","Detectors"
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2015
ISSN :
1092-8081
Type :
conf
DOI :
10.1109/IPCon.2015.7323686
Filename :
7323686
Link To Document :
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