DocumentCode :
3688293
Title :
High-power, high-speed for RF photonics applications
Author :
Joe C. Campbell
Author_Institution :
Electrical and Computer Engineering Department, University of Virginia, Charlottesville, 22904, United States of America
fYear :
2015
Firstpage :
124
Lastpage :
125
Abstract :
There are a growing number of RF photonics applications. In these systems photodiodes with high saturation current and high linearity enable high link-gain, low noise figure, and high dynamic range. To date, the best performance has been achieved with charge-compensated modified uni-traveling carrier (CC-MUTC) photodiodes. This talk will describe the design and performance characteristics of these photodiodes.
Keywords :
"Photonics","Photodiodes","Indium phosphide","III-V semiconductor materials","Silicon","Indium gallium arsenide","Satellites"
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2015
ISSN :
1092-8081
Type :
conf
DOI :
10.1109/IPCon.2015.7323745
Filename :
7323745
Link To Document :
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