DocumentCode :
3688917
Title :
High-performance quantum well amplifiers for the WDM system
Author :
Mingjun Xia;H. Ghafouri-Shiraz
Author_Institution :
School of Electronic Electrical and System Engineering, University of Birmingham, B15 2TT, UK
fYear :
2015
Firstpage :
62
Lastpage :
65
Abstract :
This paper presents a new high-performance quantum well amplifier with longitudinal non-uniform distributed compressive strain for the WDM system. Quantum well transmission line modelling (QW-TLM) method is adopted to analyze the scattering spectra of electron transitions and it was found that the decreased carrier density can induce the blue shift and lower magnitude of electron scattering spectrum at a certain wave vector while increasing the compressive strain can lead to the red shift and enhanced magnitude of electron scattering spectrum at the same wave vector. Based on the theoretical analysis, the longitudinal linearly compressively strained quantum well amplifiers are proposed. Simulation results show that the method of distributing linear compressive strain along the quantum well amplifier cavity can effectively increase the amplifier spectral bandwidth and improve the output performance of QW-SOAs in the WDM system.
Keywords :
"Strain","Charge carrier density","Cavity resonators","Optical amplifiers","Stimulated emission","Optical scattering"
Publisher :
ieee
Conference_Titel :
Sarnoff Symposium, 2015 36th IEEE
Type :
conf
DOI :
10.1109/SARNOF.2015.7324644
Filename :
7324644
Link To Document :
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