Title :
Theoretical analyses and modeling for nanoelectronics
Author :
G. Baccarani;E. Baravelli;E. Gnani;A. Gnudi;S. Reggiani
Author_Institution :
ARCES-DEI, University of Bologna, Via Toffano 2 - 40125, Bologna, Italy
Abstract :
In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore´s law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized and a few simulation results of heterojunction TFETs are reported and discussed.
Keywords :
"Inverters","Logic gates","Tunneling","CMOS integrated circuits","Leakage currents","Heterojunctions"
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2015 45th European
Print_ISBN :
978-1-4673-7133-9
Electronic_ISBN :
2378-6558
DOI :
10.1109/ESSDERC.2015.7324700
