DocumentCode :
3688992
Title :
Emerging nonvolatile memory (NVM) technologies
Author :
An Chen
Author_Institution :
TD Research, GLOBALFOUNDRIES, Santa Clara, USA 95054
fYear :
2015
Firstpage :
109
Lastpage :
113
Abstract :
Significant progress has been made recently in emerging nonvolatile memories (NVMs). This paper will discuss advantages and challenges of several promising NVM devices, as well as their potential applications. Changing market trends toward mobile, IoT, and data-centric applications create new opportunities for NVMs. High-performance NVMs may enable novel architectures and designs, e.g., more uniform memory hierarchy, co-located logic and memory, and fine-grained power gating. Storage-class memories based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized to extend their applications beyond memory space, e.g., synaptic functions, security elements, etc.
Keywords :
"Nonvolatile memory","Switches","Random access memory","Phase change materials","Performance evaluation","Magnetic tunneling","Computer architecture"
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2015 45th European
ISSN :
1930-8876
Print_ISBN :
978-1-4673-7133-9
Electronic_ISBN :
2378-6558
Type :
conf
DOI :
10.1109/ESSDERC.2015.7324725
Filename :
7324725
Link To Document :
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