Title :
The world´s first high voltage GaN-on-diamond power devices
Author :
Turar Baltynov;Vineet Unni;E. M. Sankara Narayanan
Author_Institution :
Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom
Abstract :
This paper reports the fabrication method and electrical characterization results of the first-ever demonstrated high voltage AlGaN/GaN HEMTs on CVD diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ~ 1100V. Temperature characterization of Capacitance voltage characteristics provides insight on the temperature dependence of VTH and 2DEG sheet carrier concentration in the fabricated devices.
Keywords :
"HEMTs","MODFETs","Gallium nitride","Aluminum gallium nitride","Wide band gap semiconductors","Logic gates","Temperature measurement"
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2015 45th European
Print_ISBN :
978-1-4673-7133-9
Electronic_ISBN :
2378-6558
DOI :
10.1109/ESSDERC.2015.7324729
