• DocumentCode
    3689026
  • Title

    Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR

  • Author

    Gaspard Hiblot;Quentin Rafhay;Loïc Gaben;Gérard Ghibaudo;Frédéric Boeuf

  • Author_Institution
    STMicroelectronics, 850 rue Jean Monnet, BP 16, 38926 Crolles, France
  • fYear
    2015
  • Firstpage
    242
  • Lastpage
    245
  • Abstract
    In this work, the optimum design of Trigate-on-Insulator MOSFET devices is investigated with the MASTAR platform, focusing on the channel aspect ratio. First, the MAS-TAR Trigate model is described, and new components are validated with TCAD simulations. Using the verilog-A implementation of this model, SPICE simulations of inverter chains are later performed to analyze the device performance, employing different power reduction techniques. Finally, the variability issue is addressed with Monte-Carlo simulations of 6T SRAM cells.
  • Keywords
    "SRAM cells","Semiconductor device modeling","Integrated circuit modeling","Logic gates","MOSFET","Capacitance","Solid modeling"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference (ESSDERC), 2015 45th European
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-7133-9
  • Electronic_ISBN
    2378-6558
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2015.7324759
  • Filename
    7324759