DocumentCode
3689026
Title
Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR
Author
Gaspard Hiblot;Quentin Rafhay;Loïc Gaben;Gérard Ghibaudo;Frédéric Boeuf
Author_Institution
STMicroelectronics, 850 rue Jean Monnet, BP 16, 38926 Crolles, France
fYear
2015
Firstpage
242
Lastpage
245
Abstract
In this work, the optimum design of Trigate-on-Insulator MOSFET devices is investigated with the MASTAR platform, focusing on the channel aspect ratio. First, the MAS-TAR Trigate model is described, and new components are validated with TCAD simulations. Using the verilog-A implementation of this model, SPICE simulations of inverter chains are later performed to analyze the device performance, employing different power reduction techniques. Finally, the variability issue is addressed with Monte-Carlo simulations of 6T SRAM cells.
Keywords
"SRAM cells","Semiconductor device modeling","Integrated circuit modeling","Logic gates","MOSFET","Capacitance","Solid modeling"
Publisher
ieee
Conference_Titel
Solid State Device Research Conference (ESSDERC), 2015 45th European
ISSN
1930-8876
Print_ISBN
978-1-4673-7133-9
Electronic_ISBN
2378-6558
Type
conf
DOI
10.1109/ESSDERC.2015.7324759
Filename
7324759
Link To Document