DocumentCode :
3689026
Title :
Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR
Author :
Gaspard Hiblot;Quentin Rafhay;Loïc Gaben;Gérard Ghibaudo;Frédéric Boeuf
Author_Institution :
STMicroelectronics, 850 rue Jean Monnet, BP 16, 38926 Crolles, France
fYear :
2015
Firstpage :
242
Lastpage :
245
Abstract :
In this work, the optimum design of Trigate-on-Insulator MOSFET devices is investigated with the MASTAR platform, focusing on the channel aspect ratio. First, the MAS-TAR Trigate model is described, and new components are validated with TCAD simulations. Using the verilog-A implementation of this model, SPICE simulations of inverter chains are later performed to analyze the device performance, employing different power reduction techniques. Finally, the variability issue is addressed with Monte-Carlo simulations of 6T SRAM cells.
Keywords :
"SRAM cells","Semiconductor device modeling","Integrated circuit modeling","Logic gates","MOSFET","Capacitance","Solid modeling"
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2015 45th European
ISSN :
1930-8876
Print_ISBN :
978-1-4673-7133-9
Electronic_ISBN :
2378-6558
Type :
conf
DOI :
10.1109/ESSDERC.2015.7324759
Filename :
7324759
Link To Document :
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