A systematic test approach for through-silicon via (TSV) process

In this paper, a systematic test approach is presented for rapid detection of the defects in pre- and post-bond through-silicon vias (TSV). The cylindrical, annular, and coaxial TSVs are studied using the full-wave electromagnetic simulation. The impacts of open and pinhole defects in the pre-bond TSVs can be effectively observed in the Z-parameter variation. Then, a defect detection scheme is developed for post-bond TSVs by assuming that only open defects are induced by bump bonding after repairing the defects in the pre-bond TSVs. By using simple resistor chain, multi-open defects can also be located efficiently and accurately.