Analysis of trapping effect in GaN HEMT modeling

This paper presents the large-signal modeling of the trapping effect in GaN HEMT device. Trapping effect leads to strong dispersion from pulsed I-V down to dc scales in GaN device modeling. The trapping mechanism is analyzed in detail. Several published methods have been introduced, to deal with large-signal modeling. A modified Angelov model with drain-lag subcircuit is proposed. This model can reproduce the asymmetrical behavior of traps which include capture and emission processes. It can predict pulse I-V and DC measurement. Comparison results between the measured and modeled I-V data are presented, which demonstrates accurately in different bias condition.