Title :
High power S-band GaN-based power amplifier for radar systems
Author :
Yuting Yang;Mi Zhang;Wenquan Che;Haidong Chen;Qi Cai
Author_Institution :
Department of Communication Engineering, Nanjing University of Science &
fDate :
7/1/2015 12:00:00 AM
Abstract :
One S-band high-power GaN-based power amplifier (PA) is investigated. The design of the multi-stage PA and the biasing circuit are investigated seperately, including the two stages of power amplifiers which delivers about 50dBm of saturated output power in class AB from 2.7 to 2.9 GHz and the bias control channel which provides special bias and power sequencing for GaN HEMTs. Overall circuits operating at S band are designed, fabricated and measured.
Keywords :
"Power amplifiers","Gallium nitride","HEMTs","MODFETs","Power generation","Logic gates","Threshold voltage"
Conference_Titel :
Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
DOI :
10.1109/IMWS-AMP.2015.7324922
