DocumentCode :
3689186
Title :
Permittivity extraction from on-wafer scattering parameters at microwave frequency based on electromagnetic modeling
Author :
Xi Ning;Hui Huang;Shuming Chen;Jinying Zhang;Xinmeng Liu;Lei Wang
Author_Institution :
College of Computer, National University of Defense Technology, Changsha, China 410073
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
3
Abstract :
A new and simple method for determining the permittivity of dielectric materials using electromagnetic modeling is presented in this paper. The permittivity, which is extracted from the on-wafer scattering parameters (S-parameters) of coplanar waveguides (CPWs) with different lengths fabricated in measured substrates, is estimated by comparing the propagation-constants calculated from S-parameters with the one simulated from electromagnetic modeling. Compared to the approach using general analytical calculation, these two approaches have similar accuracy at the frequency range from 1 GHz to 110 GHz for silicon substrate. However, our proposed approach is easier to be implemented.
Keywords :
"Permittivity","Scattering parameters","Substrates","Permittivity measurement","Transmission line measurements","Silicon","Coplanar waveguides"
Publisher :
ieee
Conference_Titel :
Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
Type :
conf
DOI :
10.1109/IMWS-AMP.2015.7324923
Filename :
7324923
Link To Document :
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