Title :
Influence of packaging materials on GaN RF power devices
Author :
M. Buchta;J. Thorpe;H. Blanck;K. Beilenhoff;D. Floriot;M. Kuball;T. Mrotzek;S. Knippscheer;F. Courtade;A. Xiong
Author_Institution :
United Monolithic Semiconductors, Ulm, Germany
fDate :
7/1/2015 12:00:00 AM
Abstract :
This paper describes the influence of different base plate materials on the electrical behavior of a RF GaN power device. Three different materials are tested and measured, first with a smaller device, then with a 36mm gate periphery AlGaN/GaN HEMT on SiC device, with an output power of 130W at L-band. The influence of the thermal conductance of each base plate material on the electrical performance of the devices is shown.
Keywords :
"Gallium nitride","Temperature measurement","Semiconductor device measurement","Logic gates","Power measurement","HEMTs","Harmonic analysis"
Conference_Titel :
Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
DOI :
10.1109/IMWS-AMP.2015.7324949
