Title :
GaN device and modeling with emphasis on trapping effect and thermal challenges for PA design (Invited)
Author :
Fujiang Lin;Weiqiang Qian;Lei Li;Mehdi Khan
Author_Institution :
Department of Electronic Science and Technology University of Science and Technology of China (USTC), Hefei, Anhui, 230027, P.R. China
fDate :
7/1/2015 12:00:00 AM
Abstract :
This paper presents the recent development of GaN device technologies and modeling cum methodologies for design high efficient GaN power amplifier. Focus is on the trapping and thermal effects which are difficult in GaN large-signal modeling. The mechanism of trapping and thermal is analyzed and simulated. GaN power amplifier design using developed model is introduced.
Keywords :
"Gallium nitride","Charge carrier processes","Power amplifiers","HEMTs","Mathematical model","Power generation","Logic gates"
Conference_Titel :
Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
DOI :
10.1109/IMWS-AMP.2015.7324951
