Title :
AlGaN/GaN HEMT development targeted for S-band application
Author :
Chenggong Yin;Xi Song;Xinchuan Zhang;Mengjie Zhou;Yongsheng Zhang;Naiqian Zhang;Yi Pei
Author_Institution :
Dynax Semiconductor Inc., 215300 Jiangsu, China
fDate :
7/1/2015 12:00:00 AM
Abstract :
This paper demonstrates a 180W packaged AlGaN/GaN HEMT targeted for S-band application, operating at 48V drain bias voltage. Under WCDMA (with DPD) test, the average power and drain efficiency are 35W and 33.3%. After 1000 hours HTRB test, no electrical failure of the device is observed.
Keywords :
"Gallium nitride","HEMTs","Aluminum gallium nitride","Wide band gap semiconductors","Logic gates","Integrated circuit modeling","Multiaccess communication"
Conference_Titel :
Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
DOI :
10.1109/IMWS-AMP.2015.7324952
