Enhanced GaN HEMT large-signal model with self-heating and trapping effects for power amplifier design

An empirical large-signal model for high-power Gallium Nitride (GaN) high electron-mobility transistors (HEMTs) is presented in this paper. This model improves the trapping effects of Angelov model. It is target for power amplifier CAD design. Power amplifier generates high power density which causes temperature rise in the channel called. This self-heating effect is implemented in our model. In addition, the model covers also trapping effects associated with both the surface and the layer underneath active channel. Those trapping effects are well described in proposed new drain current equation. The model is implemented in a commercial CAD tool and validated by PA design of I-V, S-parameter and load-pull simulations.