Title :
Circuit modeling of Cu/CNT composite through-silicon vias (TSV)
Author :
Jie Zheng;Zhi-Qiang Su;Guan-Yi Wang;Meng Li;Wen-Sheng Zhao;Gaofeng Wang
Author_Institution :
Key Lab of RF Circuits and Systems of Ministry of Education, Microelectronics CAD Center, Hangzhou Dianzi University, Hangzhou, China
fDate :
7/1/2015 12:00:00 AM
Abstract :
In this paper, the CNT TSVs, as well as Cu/CNT composite TSVs, are investigated based on the equivalent circuit model. The effective complex conductivity, which incorporates the kinetic inductive effect of CNTs, has been employed for high-frequency characterization. The performance comparison between Cu, CNT, and Cu/CNT composite TSVs are carried out. It is found that Cu/CNT composite TSVs can be utilized to improve the system reliability without losing much performance.
Keywords :
"Through-silicon vias","Integrated circuit modeling","Silicon","Solid modeling","Conductivity","Reliability","Carbon nanotubes"
Conference_Titel :
Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
DOI :
10.1109/IMWS-AMP.2015.7325040
