Title :
InGaAs/InP double heterojunction bipolar transistors with fmax=532GHz
Author :
Cheng Wei;Wang Yuan;Niu Bin;Xie Zi-Li;Xie Jun-Ling;Lu Hai-Yan;Zhao Yan;Sun Yan;Chen Tang-Sheng
Author_Institution :
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, 210016, CHN
fDate :
7/1/2015 12:00:00 AM
Abstract :
An InGaAs/InP DHBT with InGaAsP composite collector is designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The DHBT with emitter area of 0.5×5μm2 exhibits a current cutoff frequency ft=350GHz and a maximum oscillation frequency fmax=532GHz which is to our knowledge the highest BVCEO ever reported for InGaAs/InP DHBTs in China. The breakdown voltage is 4.8V. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage controlled oscillator (VCO) and mixer applications at THz span.
Keywords :
"Indium phosphide","III-V semiconductor materials","Indium gallium arsenide","DH-HEMTs","Cutoff frequency","Double heterojunction bipolar transistors","Planarization"
Conference_Titel :
Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
DOI :
10.1109/IMWS-AMP.2015.7325048
