DocumentCode :
3689798
Title :
Plasma etch challenges at 14nm and beyond technology nodes in the BEOL
Author :
Ph. Brun;F. Bailly;M. Guillermet;E. Aparico;N. Posseme
Author_Institution :
CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, France
fYear :
2015
fDate :
5/1/2015 12:00:00 AM
Firstpage :
21
Lastpage :
24
Abstract :
With the constant scaling down in dimension, the metal hard mask strategy, integration of choice for porous SiOCH film integration, presents new issues that cannot not been neglected for the 14nm and beyond. These issues and associated solutions are presented from plasma etch point of view for the 14nm node.
Keywords :
"Etching","Plasmas","Chemistry","Tin","Dielectric films"
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
ISSN :
2380-632X
Electronic_ISBN :
2380-6338
Type :
conf
DOI :
10.1109/IITC-MAM.2015.7325604
Filename :
7325604
Link To Document :
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