Title :
Nickel silicide for interconnects
Author :
Kevin L. Lin;Stephanie A. Bojarski;Colin T. Carver;Manish Chandhok;Jasmeet S. Chawla;James S. Clarke;Michael Harmes;Brian Krist;Hazel Lang;Mona Mayeh;Sudipto Naskar;John J. Plombon;Seung Hoon Sung;Hui Jae Yoo
Author_Institution :
Components Research, Quality and Reliability
fDate :
5/1/2015 12:00:00 AM
Abstract :
Nickel silicide is an attractive option for interconnects at small dimensions because of its short electron mean free path and good electromigration behavior. Nickel silicide interconnects can be integrated using either a subtractive or damascene process. Precise control of final metal composition ratio is important for obtaining low resistivity, as shown in thin-film and patterned structure measurements.
Keywords :
"Nickel","Silicides","Conductivity","Microelectronics","Thermal stability","Yttrium"
Conference_Titel :
Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
Electronic_ISBN :
2380-6338
DOI :
10.1109/IITC-MAM.2015.7325612
