DocumentCode
3689817
Title
In-situ electrical characterization of Pt/NiO/Pt resistive memory elementary cells during FIB milling: A step towards electrical tomography of nanofilaments
Author
C. Guedj;G. Auvert;E. Martinez
Author_Institution
Univ. Grenoble Alpes, F-38000 Grenoble, France, CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
fYear
2015
fDate
5/1/2015 12:00:00 AM
Firstpage
57
Lastpage
58
Abstract
Electrical characterization during FIB milling of an elementary Pt/NiO/Pt resistive memory cell is used to localize the conducting channels and to estimate the size and shape of the nanofilament. A good agreement is found with cross sectional high resolution Transmission Electron Microscopy images. This methodology is a potential tool to obtain in-operando electrical tomography of conducting paths with subnanometric spatial resolution.
Keywords
"Milling","Shape","Spatial resolution","Current measurement","Microscopy","Electric variables"
Publisher
ieee
Conference_Titel
Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
ISSN
2380-632X
Electronic_ISBN
2380-6338
Type
conf
DOI
10.1109/IITC-MAM.2015.7325625
Filename
7325625
Link To Document