• DocumentCode
    3689819
  • Title

    Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In0.53Ga0.47As under-layer by means of full 3D reciprocal space mapping

  • Author

    S. Zhiou;Ph. Rodriguez;P. Gergaud;F. Nemouchi;T. Nguyen Thanh

  • Author_Institution
    Univ. Grenoble Alpes, F-38000 Grenoble, France CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.
  • Keywords
    "Indium gallium arsenide","Intermetallic","Nickel","Substrates","Silicon","III-V semiconductor materials","Indium phosphide"
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
  • ISSN
    2380-632X
  • Electronic_ISBN
    2380-6338
  • Type

    conf

  • DOI
    10.1109/IITC-MAM.2015.7325627
  • Filename
    7325627
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3689819