Title :
Influence of the substrate on the solid-state reaction of ultra-thin Ni film with a In0.53Ga0.47As under-layer by means of full 3D reciprocal space mapping
Author :
S. Zhiou;Ph. Rodriguez;P. Gergaud;F. Nemouchi;T. Nguyen Thanh
Author_Institution :
Univ. Grenoble Alpes, F-38000 Grenoble, France CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
fDate :
5/1/2015 12:00:00 AM
Abstract :
We studied the solid-state reaction of Ni thin films with InGaAs layers grown on InP or Si substrates. The inter-metallics obtained carried an hexagonal structure, but yielded a difference in orientation regarding either the substrates or the annealing temperature.
Keywords :
"Indium gallium arsenide","Intermetallic","Nickel","Substrates","Silicon","III-V semiconductor materials","Indium phosphide"
Conference_Titel :
Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
Electronic_ISBN :
2380-6338
DOI :
10.1109/IITC-MAM.2015.7325627
