Numerical simulation of nano-indentation induced fracture of low-k dielectric thin films using the cube corner indenter

In this study, indentation and fracture of compliant low-dielectric constant (low-k) films on silicon substrates was investigated by means of finite element (FE) modelling. Cohesive zone damage models were employed for fracture simulation and damage constitutive parameters and plastic yield stress of organosilicate glass 2.4 (OSG 2.4) low-k films coated on silicon substrates were obtained by correlating the force-displacement and crack growth response with experiments. The model lends itself to characterization of brittle films where the value of the Young´s modulus, the maximum cohesive strength, the critical cohesive energy release rate and plastic yield stress of the low-k films can be extracted only by conducting cube corner indentation experiments and employing the finite element model.