• DocumentCode
    3689828
  • Title

    Contribution of molecular simulation to the characterization of porous low-k materials

  • Author

    ° Lucile Broussous;Matthieu Lépinay;Benoit Coasne;Christophe Licitra;François Bertin;Vincent Rouessac;André Ayral

  • Author_Institution
    STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles cedex, France
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    123
  • Lastpage
    126
  • Abstract
    This study aims to investigate the modified surface porosity of SiOCH low-k porous thin films using statistical mechanics molecular simulations and ellipso-porosimetry. The thin films are modified by plasma etching and wet cleaning. Numerical simulations of solvent adsorption on surfaces highlighted solvent affinity variations depending on chemical surface compositions.
  • Keywords
    "Adsorption","Methanol","Silicon compounds","Solvents","Surface treatment","Chemicals","Probes"
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
  • ISSN
    2380-632X
  • Electronic_ISBN
    2380-6338
  • Type

    conf

  • DOI
    10.1109/IITC-MAM.2015.7325636
  • Filename
    7325636
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3689828