Title :
Solid state reaction of Ni thin film on n-InP susbtrate for III-V laser contact technology
Author :
E. Ghegin;F. Nemouchi;J. Lábár;S. Favier;C. Perrin;K. Hoummada;S. Gurbán;P. Gergaud
Author_Institution :
STMicroelectronics, 850 rue Jean Monnet 38926 Crolles Cedex, France
fDate :
5/1/2015 12:00:00 AM
Abstract :
The metallurgical properties of the Ni/n-InP system have been investigated. We report the formation of a compositionally nonuniform Ni-In-P amorphous layer during the DC sputtering metal deposition process which includes an Ar+ cleaning. After RTP and long in situ annealing treatments the simultaneous appearance of the Ni2P and Ni3P binary phases and the Ni2InP ternary phase were observed. Kinetics and nucleation phenomena were highlighted by the precipitation of In during the RTP.
Keywords :
"Nickel","Indium phosphide","III-V semiconductor materials","Decision support systems","Annealing","Physics"
Conference_Titel :
Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
Electronic_ISBN :
2380-6338
DOI :
10.1109/IITC-MAM.2015.7325664
