Title :
High power terahertz induced carrier multiplication in Silicon
Author :
A. T. Tarekegne;P. Klarskov;K. Iwaszczuk;P. U. Jepsen
Author_Institution :
DTU Fotonik, Technical University of Denmark, Ø
Abstract :
The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons.
Keywords :
"Silicon","Impact ionization","Antenna arrays","Conductivity","Arrays","Resonant frequency","Absorption"
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
Electronic_ISBN :
2162-2035
DOI :
10.1109/IRMMW-THz.2015.7327401
