• DocumentCode
    3691250
  • Title

    High power terahertz induced carrier multiplication in Silicon

  • Author

    A. T. Tarekegne;P. Klarskov;K. Iwaszczuk;P. U. Jepsen

  • Author_Institution
    DTU Fotonik, Technical University of Denmark, Ø
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons.
  • Keywords
    "Silicon","Impact ionization","Antenna arrays","Conductivity","Arrays","Resonant frequency","Absorption"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
  • ISSN
    2162-2027
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2015.7327401
  • Filename
    7327401
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3691250