Title :
Bandwidth measurement of terahertz detector using high electron mobility transistor by heterodyne mixing
Author :
Y. Ueda;T. Nukariya;S. Suzuki;M. Asada
Author_Institution :
Graduate School of Science and Engineering, Tokyo Institute of Technology
Abstract :
We measured the bandwidth of a terahertz detector using an InAlAs/InGaAs high-electron-mobility-transistor by heterodyne mixing with UTC-PD and a frequency multiplier as a radio frequency (RF) and local oscillator (LO), respectively. The intensity of the intermediate signal was measured by changing the frequency of UTC-PD, and a very high bandwidth of up to 26 GHz was obtained.
Keywords :
"Detectors","HEMTs","Bandwidth","Frequency measurement","Yttrium","Sensitivity","Logic gates"
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
Electronic_ISBN :
2162-2035
DOI :
10.1109/IRMMW-THz.2015.7327412
