• DocumentCode
    3691280
  • Title

    Silicon junctionless field effect transistors as low noise THz detectors

  • Author

    P. Zagrajek;J. Marczewski;M. Zaborowski;M. Piszczek

  • Author_Institution
    Institute of Optoelectronics, Military University of Technology, Warsaw, Poland
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper describes metal-oxide-semiconductor junctionless field effect transistors working as detectors of THz radiation. The exceptionally high signal to noise ratio has been achieved. These devices may operate as two terminal detectors without any gate bias.
  • Keywords
    "Field effect transistors","Detectors","Logic gates","Resistance","Noise measurement","Standards","Electrical resistance measurement"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
  • ISSN
    2162-2027
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2015.7327433
  • Filename
    7327433
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3691280